IMEC

Worldwide commercial interest in carbon nanotubes (CNTs) is reflected in a production capacity that presently exceeds several thousand tons per year. Currently, bulk CNT powders are incorporated in diverse commercial products ranging from rechargeable batteries, automotive parts, and sporting goods to boat hulls and water filters. Advances in CNT synthesis, purification, and chemical modification are enabling integration of CNTs in thin-film electronics and large-area coatings. Although not yet providing compelling mechanical strength or electrical or thermal conductivities for many applications, CNT yarns and sheets already have promising performance for applications including supercapacitors, actuators, and lightweight electromagnetic shields.

Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential self-terminating gas–solid reactions, has for about four decades been applied for manufacturing conformal inorganic material layers with thickness down to the nanometer range. Despite the numerous successful applications of material growth by ALD, many physicochemical processes that control ALD growth are not yet sufficiently understood. To increase understanding of ALD processes, overviews are needed not only of the existing ALD processes and their applications, but also of the knowledge of the surface chemistry of specific ALD processes. This work aims to start the overviews on specific ALD processes by reviewing the experimental information available on the surface chemistry of the trimethylaluminum/water process. This process is generally known as a rather ideal ALD process, and plenty of information is available on its surface chemistry. This in-depth summary of the surface chemistry of one representative ALD process aims also to provide a view on the current status of understanding the surface chemistry of ALD, in general. The review starts by describing the basic characteristics of ALD, discussing the history of ALD—including the question who made the first ALD experiments—and giving an overview of the two-reactant ALD processes investigated to date. Second, the basic concepts related to the surface chemistry of ALD are described from a generic viewpoint applicable to all ALD processes based on compound reactants. This description includes physicochemical requirements for self-terminating reactions, reaction kinetics, typical chemisorption mechanisms, factors causing saturation, reasons for growth of less than a monolayer per cycle, effect of the temperature and number of cycles on the growth per cycle (GPC), and the growth mode. A comparison is made of three models available for estimating the sterically allowed value of GPC in ALD. Third, the experimental information on the surface chemistry in the trimethylaluminum/water ALD process are reviewed using the concepts developed in the second part of this review. The results are reviewed critically, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials. Although the surface chemistry of the trimethylaluminum/water ALD process is rather well understood, systematic investigations of the reaction kinetics and the growth mode on different substrates are still missing. The last part of the review is devoted to discussing issues which may hamper surface chemistry investigations of ALD, such as problematic historical assumptions, nonstandard terminology, and the effect of experimental conditions on the surface chemistry of ALD. I hope that this review can help the newcomer get acquainted with the exciting and challenging field of surface chemistry of ALD and can serve as a useful guide for the specialist towards the fifth decade of ALD research.

The Photodetector Array Camera and Spectrometer (PACS) is one of the three science instruments on ESA's far infrared and submillimetre observatory. It employs two Ge:Ga photoconductor arrays (stressed and unstressed) with 16×25 pixels, each, and two filled silicon bolometer arrays with 16×32 and 32×64 pixels, respectively, to perform integral-field spectroscopy and imaging photometry in the 60–210 <i>μ<i/>m wavelength regime. In photometry mode, it simultaneously images two bands, 60–85 <i>μ<i/>m or 85–125 <i>μ<i/>m and 125–210 <i>μ<i/>m, over a field of view of ~1.75'× 3.5', with close to Nyquist beam sampling in each band. In spectroscopy mode, it images a field of 47” × 47”, resolved into 5×5 pixels, with an instantaneous spectral coverage of ~1500 km s<sup>-1<sup/> and a spectral resolution of ~175 km s<sup>-1<sup/>. We summarise the design of the instrument, describe observing modes, calibration, and data analysis methods, and present our current assessment of the in-orbit performance of the instrument based on the performance verification tests. PACS is fully operational, and the achieved performance is close to or better than the pre-launch predictions.

The ever increasing requirements for electrical performance of on-chip wiring has driven three major technological advances in recent years. First, copper has replaced Aluminum as the new interconnect metal of choice, forcing also the introduction of damascene processing. Second, alternatives for SiO2 with a lower dielectric constant are being developed and introduced in main stream processing. The many new resulting materials needs to be classified in terms of their materials characteristics, evaluated in terms of their properties, and tested for process compatibility. Third, in an attempt to lower the dielectric constant even more, porosity is being introduced into these new materials. The study of processes such as plasma interactions and swelling in liquid media now becomes critical. Furthermore, pore sealing and the deposition of a thin continuous copper diffusion barrier on a porous dielectric are of prime importance. This review is an attempt to give an overview of the classification, the characteristics and properties of low-k dielectrics. In addition it addresses some of the needs for improved metrology for determining pore sizes, size distributions, structure, and mechanical properties.

In order to quantify the energy efficiency of a wireless network, the power consumption of the entire system needs to be captured. In this article, the necessary extensions with respect to existing performance evaluation frameworks are discussed. The most important addenda of the proposed energy efficiency evaluation framework (E <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> F) are a sophisticated power model for various base station types, as well as large-scale long-term traffic models. The BS power model maps the RF output power radiated at the antenna elements to the total supply power of a BS site. The proposed traffic model emulates the spatial distribution of the traffic demands over large geographical regions, including urban and rural areas, as well as temporal variations between peak and off-peak hours. Finally, the E <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> F is applied to quantify the energy efficiency of the downlink of a 3GPP LTE radio access network.

During the last few years the developments in the field of III–nitrides have been spectacular. High quality epitaxial layers can now be grown by MOVPE. Recently good quality epilayers have also been grown by MBE. Considerable work has been done on dislocations, strain, and critical thickness of GaN grown on different substrates. Splitting of valence band by crystal field and by spin-orbit interaction has been calculated and measured. The measured values agree with the calculated values. Effects of strain on the splitting of the valence band and on the optical properties have been studied in detail. Values of band offsets at the heterointerface between several pairs of different nitrides have been determined. Extensive work has been done on the optical and electrical properties. Near band-edge spectra have been measured over a wide range of temperatures. Free and bound exciton peaks have been resolved. Valence band structure has been determined using the PL spectra and compared with the theoretically calculated spectra. Strain and its effect on the optical properties of the III–nitride layers have been studied both theoretically and experimentally. Both n and p conductivity have been achieved. InGaN quantum wells with GaN and AlGaN barriers and cladding layers have been investigated. PL of the quantum wells is affected by confinement effects, band filling, quantum confined Stark effect, and strain. This work has led to the fabrication of advanced optoelectronic and electronic devices. The light-emitting decodes emitting in the blue and green regions of the spectrum have been commercialized. The work leading to these developments is reviewed in this article. The device processing methods and actual devices are not discussed.

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

Correction for 'An updated roadmap for the integration of metal-organic frameworks with electronic devices and chemical sensors' by Ivo Stassen et al., Chem. Soc. Rev., 2017, DOI: 10.1039/c7cs00122c.

Measuring the dynamics of neural processing across time scales requires following the spiking of thousands of individual neurons over milliseconds and months. To address this need, we introduce the Neuropixels 2.0 probe together with newly designed analysis algorithms. The probe has more than 5000 sites and is miniaturized to facilitate chronic implants in small mammals and recording during unrestrained behavior. High-quality recordings over long time scales were reliably obtained in mice and rats in six laboratories. Improved site density and arrangement combined with newly created data processing methods enable automatic post hoc correction for brain movements, allowing recording from the same neurons for more than 2 months. These probes and algorithms enable stable recordings from thousands of sites during free behavior, even in small animals such as mice.

Local mechanical stress is currently an important topic of concern in microelectronics processing. A technique that has become increasingly popular for local mechanical stress measurements is micro-Raman spectroscopy. In this paper, the theoretical background of Raman spectroscopy, with special attention to its sensitivity for mechanical stress, is discussed, and practical information is given for the application of this technique to stress measurements in silicon integrated circuits. An overview is given of some important applications of the technique, illustrated with examples from the literature: the first studies of the influence of external stress on the Si Raman modes are reviewed; the application of this technique to measure stress in silicon-on-insulator films is discussed; results of measurements of local stress in isolation structures and trenches are reviewed; and the use of micro-Raman spectroscopy to obtain more information on stress in metals, by measuring the stress in the surrounding Si substrate is explained.

High-index-contrast, wavelength-scale structures are key to ultracompact integration of photonic integrated circuits. The fabrication of these nanophotonic structures in silicon-on-insulator using complementary metal-oxide-semiconductor processing techniques, including deep ultraviolet lithography, was studied. It is concluded that this technology is capable of commercially manufacturing nanophotonic integrated circuits. The possibilities of photonic wires and photonic-crystal waveguides for photonic integration are compared. It is shown that, with similar fabrication techniques, photonic wires perform at least an order of magnitude better than photonic-crystal waveguides with respect to propagation losses. Measurements indicate propagation losses as low as 0.24 dB/mm for photonic wires but 7.5 dB/mm for photonic-crystal waveguides.

The blockchain technology has revolutionized the digital currency space with the pioneering cryptocurrency platform named Bitcoin. From an abstract perspective, a blockchain is a distributed ledger capable of maintaining an immutable log of transactions happening in a network. In recent years, this technology has attracted significant scientific interest in research areas beyond the financial sector, one of them being the Internet of Things (IoT). In this context, the blockchain is seen as the missing link toward building a truly decentralized, trustless, and secure environment for the IoT and, in this survey, we aim to shape a coherent and comprehensive picture of the current state-of-the-art efforts in this direction. We start with fundamental working principles of blockchains and how blockchain-based systems achieve the characteristics of decentralization, security, and auditability. From there, we build our narrative on the challenges posed by the current centralized IoT models, followed by recent advances made both in industry and research to solve these challenges and effectively use blockchains to provide a decentralized, secure medium for the IoT.

The outstanding properties of SiO2, which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO2 interface, which forms the heart of the modern metal–oxide–semiconductor field effect transistor, the building block of the integrated circuit, is arguably the worlds most economically and technologically important materials interface. This article summarizes recent progress and current scientific understanding of ultrathin (&amp;lt;4 nm) SiO2 and Si–O–N (silicon oxynitride) gate dielectrics on Si based devices. We will emphasize an understanding of the limits of these gate dielectrics, i.e., how their continuously shrinking thickness, dictated by integrated circuit device scaling, results in physical and electrical property changes that impose limits on their usefulness. We observe, in conclusion, that although Si microelectronic devices will be manufactured with SiO2 and Si–O–N for the foreseeable future, continued scaling of integrated circuit devices, essentially the continued adherence to Moore’s law, will necessitate the introduction of an alternate gate dielectric once the SiO2 gate dielectric thickness approaches ∼1.2 nm. It is hoped that this article will prove useful to members of the silicon microelectronics community, newcomers to the gate dielectrics field, practitioners in allied fields, and graduate students. Parts of this article have been adapted from earlier articles by the authors [L. Feldman, E. P. Gusev, and E. Garfunkel, in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E. Garfunkel, E. P. Gusev, and A. Y. Vul’ (Kluwer, Dordrecht, 1998), p. 1 [Ref. 1]; E. P. Gusev, H. C. Lu, E. Garfunkel, T. Gustafsson, and M. Green, IBM J. Res. Dev. 43, 265 (1999) [Ref. 2]; R. Degraeve, B. Kaczer, and G. Groeseneken, Microelectron. Reliab. 39, 1445 (1999) [Ref. 3].

Electronic structure Density-functional theory Many-body perturbation theory Abinit 2009 publication. Links with several other computational materials science projects are described. This article also covers the new capabilities of Abinit that have been implemented during the last three years, complementing a recent update of the 2009

Gold nanoparticles (AuNPs) are some of the most extensively studied nanomaterials. Because of their unique optical, chemical, electrical, and catalytic properties, AuNPs have attracted enormous amount of interest for applications in biological and chemical detection and analysis. The purpose of this critical review is to provide the readers with an update on the recent developments in the field of AuNPs for sensing applications based on their optical properties. An overview of the optical properties of AuNPs is presented first, followed by a more detailed literature survey. As the last part of this review, we compare the advantages and disadvantages of each technique, briefly discuss their commercialization status, and some technical issues that remain to be solved in order to move the technique forward (151 references).

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> A comprehensive statistical model is described for ultrawideband (UWB) propagation channels that is valid for a frequency range from 3–10 GHz. It is based on measurements and simulations in the following environments: residential indoor, office indoor, builtup outdoor, industrial indoor, farm environments, and body area networks. The model is independent of the used antennas. It includes the frequency dependence of the path gain as well as several generalizations of the Saleh–Valenzuela model, like mixed Poisson times of arrival and delay-dependent cluster decay constants. A separate model is specified for the frequency range below 1 GHz. The model can thus be used for realistic performance assessment of UWB systems. It was accepted by the IEEE 802.15.4a Task Group as standard model for evaluation of UWB system proposals. This paper also presents a critical assessment of the applicability of the model and possible generalizations and improvements. </para>

During the last half century, a dramatic downscaling of electronics has taken place, a miniaturization that the industry expects to continue for at least a decade. We present efforts to use the self-assembly of one-dimensional semiconductor nanowires1 in order to bring new, high-performance nanowire devices as an add-on to mainstream Si technology. The nanowire approach offers a coaxial gate-dielectric-channel geometry that is ideal for further downscaling and electrostatic control, as well as heterostructure-based devices on Si wafers.

The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS2) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS2, the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS2.

Abstract Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

In this paper it is demonstrated in a wide stress field range that breakdown in thin oxide layers occurs as soon as a critical density of neutral electron traps in the oxide is reached. It is proven that this corresponds to a critical hole fluence, since a unique relationship between electron trap generation and hole fluence is found independent of stress field and oxide thickness. In this way literature models relating breakdown to hole fluence or to trap generation are linked. A new model for intrinsic breakdown, based on a percolation concept, is proposed. It is shown that this model can explain the experimentally observed statistical features of the breakdown distribution, such as the increasing spread of the Q/sub BD/-distribution for ultrathin oxides. An important consequence of this large spread is the strong area dependence of the Q/sub BD/ for ultrathin oxides.