Laboratoire d'Électronique des Technologies de l'Information

The 12th generation of the International Geomagnetic Reference Field (IGRF) was adopted in December 2014 by the Working Group V-MOD appointed by the International Association of Geomagnetism and Aeronomy (IAGA). It updates the previous IGRF generation with a definitive main field model for epoch 2010.0, a main field model for epoch 2015.0, and a linear annual predictive secular variation model for 2015.0-2020.0. Here, we present the equations defining the IGRF model, provide the spherical harmonic coefficients, and provide maps of the magnetic declination, inclination, and total intensity for epoch 2015.0 and their predicted rates of change for 2015.0-2020.0. We also update the magnetic pole positions and discuss briefly the latest changes and possible future trends of the Earth’s magnetic field.

Science and technologies based on terahertz frequency electromagnetic radiation (100 GHz-30 THz) have developed rapidly over the last 30 years.For most of the 20th Century, terahertz radiation, then referred to as sub-millimeter wave or far-infrared radiation, was mainly utilized by astronomers and some spectroscopists.Following the development of laser based terahertz time-domain spectroscopy in the 1980s and 1990s the field of THz science and technology expanded rapidly, to the extent that it now touches many areas from fundamental science to 'real world' applications.For example THz radiation is being used to optimize materials for new solar cells, and may also be a key technology for the next generation of airport security scanners.While the field was emerging it was possible to keep track of all new developments, however now the field has grown so much that it is increasingly difficult to follow the diverse range of new discoveries and applications that are appearing.At this point in time, when the field of THz science and technology is moving from an emerging to a more established and interdisciplinary field, it is apt to present a roadmap to help identify the breadth and future directions of the field.The aim of this roadmap is to present a snapshot of the present state of THz science and technology in 2017, and provide an opinion on the challenges and opportunities that the future holds.To be able to achieve this aim, we have invited a group of international experts to write 18 sections that cover most of the key areas of THz science and technology.We hope that The 2017 Roadmap on THz science and technology will prove to be a useful resource by providing a wide ranging introduction to the capabilities of THz radiation for those outside or just entering the field as well as providing perspective and breadth for those who are well established.We also feel that this review should serve as a useful guide for government and funding agencies.

Abstract Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with predictions of where the field is destined to reach.

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

A silicon on insulator material technology based on wafer bonding is described, in which a heat treatment induces an in-depth microslicing of one of the two bonded wafers previously implanted with hydrogen. The basic phenomena, and the first physical and electrical characterisations are discussed briefly.

Abstract In December 2019, the International Association of Geomagnetism and Aeronomy (IAGA) Division V Working Group (V-MOD) adopted the thirteenth generation of the International Geomagnetic Reference Field (IGRF). This IGRF updates the previous generation with a definitive main field model for epoch 2015.0, a main field model for epoch 2020.0, and a predictive linear secular variation for 2020.0 to 2025.0. This letter provides the equations defining the IGRF, the spherical harmonic coefficients for this thirteenth generation model, maps of magnetic declination, inclination and total field intensity for the epoch 2020.0, and maps of their predicted rate of change for the 2020.0 to 2025.0 time period.

This paper presents an optimal power management mechanism for grid connected photovoltaic (PV) systems with storage. The objective is to help intensive penetration of PV production into the grid by proposing peak shaving service at the lowest cost. The structure of a power supervisor based on an optimal predictive power scheduling algorithm is proposed. Optimization is performed using Dynamic Programming and is compared with a simple ruled-based management. The particularity of this study remains first in the consideration of batteries ageing into the optimization process and second in the “day-ahead” approach of power management. Simulations and real conditions application are carried out over one exemplary day. In simulation, it points out that peak shaving is realized with the minimal cost, but especially that power fluctuations on the grid are reduced which matches with the initial objective of helping PV penetration into the grid. In real conditions, efficiency of the predictive schedule depends on accuracy of the forecasts, which leads to future works about optimal reactive power management.

BACKGROUND: Severe, refractory obsessive-compulsive disorder (OCD) is a disabling condition. Stimulation of the subthalamic nucleus, a procedure that is already validated for the treatment of movement disorders, has been proposed as a therapeutic option. METHODS: In this 10-month, crossover, double-blind, multicenter study assessing the efficacy and safety of stimulation of the subthalamic nucleus, we randomly assigned eight patients with highly refractory OCD to undergo active stimulation of the subthalamic nucleus followed by sham stimulation and eight to undergo sham stimulation followed by active stimulation. The primary outcome measure was the severity of OCD, as assessed by the Yale-Brown Obsessive Compulsive Scale (Y-BOCS), at the end of two 3-month periods. General psychopathologic findings, functioning, and tolerance were assessed with the use of standardized psychiatric scales, the Global Assessment of Functioning (GAF) scale, and neuropsychological tests. RESULTS: After active stimulation of the subthalamic nucleus, the Y-BOCS score (on a scale from 0 to 40, with lower scores indicating less severe symptoms) was significantly lower than the score after sham stimulation (mean [+/-SD], 19+/-8 vs. 28+/-7; P=0.01), and the GAF score (on a scale from 1 to 90, with higher scores indicating higher levels of functioning) was significantly higher (56+/-14 vs. 43+/-8, P=0.005). The ratings of neuropsychological measures, depression, and anxiety were not modified by stimulation. There were 15 serious adverse events overall, including 1 intracerebral hemorrhage and 2 infections; there were also 23 nonserious adverse events. CONCLUSIONS: These preliminary findings suggest that stimulation of the subthalamic nucleus may reduce the symptoms of severe forms of OCD but is associated with a substantial risk of serious adverse events. (ClinicalTrials.gov number, NCT00169377.)

This paper presents a new classification framework for brain-computer interface (BCI) based on motor imagery. This framework involves the concept of Riemannian geometry in the manifold of covariance matrices. The main idea is to use spatial covariance matrices as EEG signal descriptors and to rely on Riemannian geometry to directly classify these matrices using the topology of the manifold of symmetric and positive definite (SPD) matrices. This framework allows to extract the spatial information contained in EEG signals without using spatial filtering. Two methods are proposed and compared with a reference method [multiclass Common Spatial Pattern (CSP) and Linear Discriminant Analysis (LDA)] on the multiclass dataset IIa from the BCI Competition IV. The first method, named minimum distance to Riemannian mean (MDRM), is an implementation of the minimum distance to mean (MDM) classification algorithm using Riemannian distance and Riemannian mean. This simple method shows comparable results with the reference method. The second method, named tangent space LDA (TSLDA), maps the covariance matrices onto the Riemannian tangent space where matrices can be vectorized and treated as Euclidean objects. Then, a variable selection procedure is applied in order to decrease dimensionality and a classification by LDA is performed. This latter method outperforms the reference method increasing the mean classification accuracy from 65.1% to 70.2%.

For the first time in the history of high energy astronomy, a large CdTe gamma-ray camera is operating in space. ISGRI is the low-energy camera of the IBIS telescope on board the INTEGRAL satellite. This paper details its design and its in-flight behavior and performances. Having a sensitive area of 2621 cm2 with a spatial resolution of 4.6 mm, a low threshold around 12 keV and an energy resolution of ~8% at 60 keV, ISGRI shows absolutely no signs of degradation after 9 months in orbit. All aspects of its in-flight behavior and scientific performance are fully nominal, and in particular the observed background level confirms the expected sensitivity of 1 milliCrab for a 106 s observation.

Interest in Wireless Body Area Networks (WBANs) has increased significantly in recent years thanks to the advances in microelectronics and wireless communications. Owing to the very stringent application requirements in terms of reliability, energy efficiency, and low device complexity, the design of these networks requires the definition of new protocols with respect to those used in general purpose wireless sensor networks. This motivates the effort in research activities and in standardisation process of the last years. This survey paper aims at reporting an overview of WBAN main applications, technologies and standards, issues in WBANs design, and evolutions. Some case studies are reported, based on both real implementation and experimentation on the field, and on simulations. These results have the aim of providing useful insights for WBAN designers and of highlighting the main issues affecting the performance of these kind of networks.

Abstract Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

Abstract A spinal cord injury interrupts the communication between the brain and the region of the spinal cord that produces walking, leading to paralysis 1,2 . Here, we restored this communication with a digital bridge between the brain and spinal cord that enabled an individual with chronic tetraplegia to stand and walk naturally in community settings. This brain–spine interface (BSI) consists of fully implanted recording and stimulation systems that establish a direct link between cortical signals 3 and the analogue modulation of epidural electrical stimulation targeting the spinal cord regions involved in the production of walking 4–6 . A highly reliable BSI is calibrated within a few minutes. This reliability has remained stable over one year, including during independent use at home. The participant reports that the BSI enables natural control over the movements of his legs to stand, walk, climb stairs and even traverse complex terrains. Moreover, neurorehabilitation supported by the BSI improved neurological recovery. The participant regained the ability to walk with crutches overground even when the BSI was switched off. This digital bridge establishes a framework to restore natural control of movement after paralysis.

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

ABSTRACT Triple‐junction solar cells from III–V compound semiconductors have thus far delivered the highest solar‐electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but material quality and the choice of bandgap energies turn out to be even more importance than the number of junctions. Several four‐junction solar cell architectures with optimum bandgap combination are found for lattice‐mismatched III–V semiconductors as high bandgap materials predominantly possess smaller lattice constant than low bandgap materials. Direct wafer bonding offers a new opportunity to combine such mismatched materials through a permanent, electrically conductive and optically transparent interface. In this work, a GaAs‐based top tandem solar cell structure was bonded to an InP‐based bottom tandem cell with a difference in lattice constant of 3.7%. The result is a GaInP/GaAs//GaInAsP/GaInAs four‐junction solar cell with a new record efficiency of 44.7% at 297‐times concentration of the AM1.5d (ASTM G173‐03) spectrum. This work demonstrates a successful pathway for reaching highest conversion efficiencies with III–V multi‐junction solar cells having four and in the future even more junctions. Copyright © 2014 John Wiley & Sons, Ltd.

The growing complexity of customizable single-chip multiprocessors is requiring communication resources that can only be provided by a highly-scalable communication infrastructure. This trend is exemplified by the growing number of network-on-chip (NoC) architectures that have been proposed recently for system-on-chip (SoC) integration. Developing NoC-based systems tailored to a particular application domain is crucial for achieving high-performance, energy-efficient customized solutions. The effectiveness of this approach largely depends on the availability of an ad hoc design methodology that, starting from a high-level application specification, derives an optimized NoC configuration with respect to different design objectives and instantiates the selected application specific on-chip micronetwork. Automatic execution of these design steps is highly desirable to increase SoC design productivity. This work illustrates a complete synthesis flow, called Netchip, for customized NoC architectures, that partitions the development work into major steps (topology mapping, selection, and generation) and provides proper tools for their automatic execution (SUNMAP, xpipescompiler). The entire flow leverages the flexibility of a fully reusable and scalable network components library called xpipes, consisting of highly-parameterizable network building blocks (network interface, switches, switch-to-switch links) that are design-time tunable and composable to achieve arbitrary topologies and customized domain-specific NoC architectures. Several experimental case studies are presented In the work, showing the powerful design space exploration capabilities of the proposed methodology and tools.

The goal of this paper is to promote the idea that including semantic and goal-oriented aspects in future 6G networks can produce a significant leap forward in terms of system effectiveness and sustainability.Semantic communication goes beyond the common Shannon paradigm of guaranteeing the correct reception of each single transmitted bit, irrespective of the meaning conveyed by the transmitted bits.The idea is that, whenever communication occurs to convey meaning or to accomplish a goal, what really matters is the impact that the received bits have on the interpretation of the meaning intended by the transmitter or on the accomplishment of a common goal.Focusing on semantic and goal-oriented aspects, and possibly combining them, helps to identify the relevant information, i.e. the information strictly necessary to recover the meaning intended by the transmitter or to accomplish a goal.Combining knowledge representation and reasoning tools with machine learning algorithms paves the way to build semantic learning strategies enabling current machine learning algorithms to achieve better interpretation capabilities and contrast adversarial attacks.6G semantic networks can bring semantic learning mechanisms at the edge of the network and, at the same time, semantic learning can help 6G networks to improve their efficiency and sustainability.

Apathy has been reported to occur after subthalamic nucleus stimulation, a treatment of motor complications in advanced Parkinson's disease. We carried out a prospective study of the occurrence of apathy and associated symptoms, predictors and mechanisms in the year following subthalamic stimulation. Dopamine agonist drugs were discontinued immediately after surgery and levodopa was markedly reduced within 2 weeks. Apathy and depression were assessed monthly, using the Starkstein apathy scale and the Beck Depression Inventory. Dopamine agonists were re-introduced if patients developed apathy or depression. Preoperative non-motor fluctuations were evaluated using the Ardouin Scale. Depression, apathy and anxiety were evaluated both on and off levodopa. Analysis of predictors of apathy was performed using a Cox proportional hazard model. Twelve patients who developed apathy and a control group of 13 patients who did not underwent [11C]-raclopride positron emission tomography scanning before and after oral intake of methylphenidate. In 63 patients with Parkinson's disease treated with subthalamic stimulation, dopaminergic treatment was decreased by 82% after surgery. Apathy occurred after a mean of 4.7 (3.3-8.2) months in 34 patients and was reversible in half of these by the 12-month follow-up. Seventeen patients developed transient depression after 5.7 (4.7-9.3) months and these fell into the apathy group with one single exception. At baseline, fluctuations in depression, apathy and anxiety scores were greater in the group with apathy. Fluctuations in apathy, depression and anxiety ratings during a baseline levodopa challenge were also significant predictors of postoperative apathy in univariate analysis, but not motor and cognitive states or the level of reduction of dopaminergic medication. The multivariate model identified non-motor fluctuations in everyday life and anxiety score during the baseline levodopa challenge as two independent significant predictors of postoperative apathy. Without methylphenidate, [11C]-raclopride binding potential values were greater in apathetic patients bilaterally in the orbitofrontal, dorsolateral prefrontal, posterior cingulate and temporal cortices, left striatum and right amygdala, reflecting greater dopamine D2/D3 receptor density and/or reduced synaptic dopamine level in these areas. The variations of [11C]-raclopride binding potential values induced by methylphenidate were greater in non-apathetic patients in the left orbitofrontal cortex, dorsolateral prefrontal cortex, thalamus and internal globus pallidus and bilaterally in the anterior and posterior cingulate cortices, consistent with a more important capacity to release dopamine. Non-motor fluctuations are related to mesolimbic dopaminergic denervation. Apathy, depression and anxiety can occur after surgery as a delayed dopamine withdrawal syndrome. A varying extent of mesolimbic dopaminergic denervation and differences in dopaminergic treatment largely determine mood, anxiety and motivation in patients with Parkinson's disease, contributing to different non-motor phenotypes.

High-k gate dielectrics, particularly Hf-based materials, are likely to be implemented in CMOS advanced technologies. One of the important challenges in integrating these materials is to achieve lifetimes equal or better than their SiO/sub 2/ counterparts. In this paper we review the status of reliability studies of high-k gate dielectrics and try to illustrate it with experimental results. High-k materials show novel reliability phenomena related to the asymmetric gate band structure and the presence of fast and reversible charge. Reliability of high-k structures is influenced both by the interfacial layer as well as the high-k layer. One of the main issues is to understand these new mechanisms in order to asses the lifetime accurately and reduce them.

We report on a numerical study of electronic transport in chemically doped 2D graphene materials. By using ab initio calculations, a self-consistent scattering potential is derived for boron and nitrogen substitutions, and a fully quantum-mechanical Kubo-Greenwood approach is used to evaluate the resulting charge mobilities and conductivities of systems with impurity concentration ranging within [0.5, 4.0]%. Even for a doping concentration as large as 4.0%, the conduction is marginally affected by quantum interference effects, preserving therefore remarkable transport properties, even down to the zero temperature limit. As a result of the chemical doping, electron-hole mobilities and conductivities are shown to become asymmetric with respect to the Dirac point.