Military University of Technology in Warsaw

In this review article a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further considerations are restricted to modern semiconductor UV detectors, so the basic theory of photoconductive and photovoltaic detectors is presented in a uniform way convenient for various detector materials. Next, the current state of the art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to a new generation of UV detectors fabricated from wide band-gap semiconductors the most promising of which are diamond and AlGaN. The latest progress in development of AlGaN UV detectors is finally described in detail.

This article reviews the history, the present status and possible future developments of HgCdTe ternary alloy for infrared (IR) detector applications. HgCdTe IR detectors have been intensively developed since the first synthesis of this material in 1958. This article summarizes the fundamental properties of this versatile narrow gap semiconductor, and relates the material properties to its successful applications as an IR photoconductive and photovoltaic detector material. An emphasis is put on key developments in the crystal growth and their influence on device evolution. Competitive technologies to HgCdTe ternary alloy are also presented.

Hitherto, two distinct families of multielement detector arrays have been used for infrared (IR) imaging system applications: linear arrays for scanning systems (first generation) and two-dimensional arrays for staring systems (second generation). Nowadays, third-generation IR systems are being developed which, in the common understanding, provide enhanced capabilities such as larger numbers of pixels, higher frame rates, better thermal resolution, multicolor functionality, and/or other on-chip signal-processing functions. In this paper, fundamental and technological issues associated with the development and exploitation of third-generation IR photon detectors are discussed. In this class of detectors the two main competitors, HgCdTe photodiodes and quantum-well photoconductors, are considered. This is followed by discussions focused on the most recently developed focal plane arrays based on type-II strained-layer superlattices and quantum dot IR photodetectors. The main challenges facing multicolor devices are concerned with complicated device structures, thicker and multilayer material growth, and more difficult device fabrication, especially for large array sizes and/or small pixel dimensions. This paper also presents and discusses the ongoing detector technology challenges that are being addressed in order to develop third-generation infrared photodetector arrays.

This paper presents a new solution to the expert system for reliable heartbeat recognition. The recognition system uses the support vector machine (SVM) working in the classification mode. Two different preprocessing methods for generation of features are applied. One method involves the higher order statistics (HOS) while the second the Hermite characterization of QRS complex of the registered electrocardiogram (ECG) waveform. Combining the SVM network with these preprocessing methods yields two neural classifiers, which have been combined into one final expert system. The combination of classifiers utilizes the least mean square method to optimize the weights of the weighted voting integrating scheme. The results of the performed numerical experiments for the recognition of 13 heart rhythm types on the basis of ECG waveforms confirmed the reliability and advantage of the proposed approach.

This paper presents the application of the fuzzy neural network for electrocardiographic (ECG) beat recognition and classification. The new classification algorithm of the ECG beats, applying the fuzzy hybrid neural network and the features drawn from the higher order statistics has been proposed in the paper. The cumulants of the second, third, and fourth orders have been used for the feature selection. The hybrid fuzzy neural network applied in the solution consists of the fuzzy self-organizing subnetwork connected in cascade with the multilayer perceptron, working as the final classifier. The c-means and Gustafson-Kessel algorithms for the self-organization of the neural network have been applied. The results of experiments of recognition of different types of beats on the basis of the ECG waveforms have confirmed good efficiency of the proposed solution. The investigations show that the method may find practical application in the recognition and classification of different type heart beats.

Abstract This paper overviews the history of infrared detector materials starting with Herschel’s experiment with thermometer on February 11th, 1800. Infrared detectors are in general used to detect, image, and measure patterns of the thermal heat radiation which all objects emit. At the beginning, their development was connected with thermal detectors, such as thermocouples and bolometers, which are still used today and which are generally sensitive to all infrared wavelengths and operate at room temperature. The second kind of detectors, called the photon detectors, was mainly developed during the 20th Century to improve sensitivity and response time. These detectors have been extensively developed since the 1940’s. Lead sulphide (PbS) was the first practical IR detector with sensitivity to infrared wavelengths up to ∼3 μm. After World War II infrared detector technology development was and continues to be primarily driven by military applications. Discovery of variable band gap HgCdTe ternary alloy by Lawson and co-workers in 1959 opened a new area in IR detector technology and has provided an unprecedented degree of freedom in infrared detector design. Many of these advances were transferred to IR astronomy from Departments of Defence research. Later on civilian applications of infrared technology are frequently called “dual-use technology applications.” One should point out the growing utilisation of IR technologies in the civilian sphere based on the use of new materials and technologies, as well as the noticeable price decrease in these high cost technologies. In the last four decades different types of detectors are combined with electronic readouts to make detector focal plane arrays (FPAs). Development in FPA technology has revolutionized infrared imaging. Progress in integrated circuit design and fabrication techniques has resulted in continued rapid growth in the size and performance of these solid state arrays.

This paper is a review of methods and techniques used for precise measurement of time intervals (TIs) or precise conversion of TIs to digital data. The following methods are described: the counter method and averaging, time stretching, time-to-amplitude conversion followed by analogue-to-digital conversion, the Vernier method, conversion utilizing tapped delay lines, and interpolation methods. Special attention has been paid to converters utilizing integrated delay lines for digital conversion of TIs, including designs with phase-locked loop and delay-locked loop circuits. This review is illustrated by design examples and contains a comprehensive list of references.

Abstract Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already. However, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. As a result, THz radiation is resistant to the techniques commonly employed in these well established neighbouring bands. In the paper, issues associated with the development and exploitation of THz radiation detectors and focal plane arrays are discussed. Historical impressive progress in THz detector sensitivity in a period of more than half century is analyzed. More attention is put on the basic physical phenomena and the recent progress in both direct and heterodyne detectors. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, pair braking detectors, hot electron mixers and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Also, the operational conditions of THz detectors and their upper performance limits are reviewed. Finally, recent advances in novel nanoelectronic materials and technologies are described. It is expected that applications of nanoscale materials and devices will open the door for further performance improvement in THz detectors.

Mechanochemistry became a powerful and popular method for the preparation of various porous materials.

Investigations of antimonide-based materials began at about the same time as HgCdTe ternary alloys—in the 1950s, and the apparent rapid success of their technology, especially low-dimensional solids, depends on the previous five decades of III-V materials and device research. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of 1990s gave a new impact and interest in development of infrared detector structures within academic and national laboratories. The development of InAs/GaSb type-II superlattices (T2SLs) results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe focal plane arrays (FPAs) at reasonable cost and the theoretical predictions of lower Auger recombination for type T2SL detectors compared with HgCdTe. Second motivation—lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall (SRH) lifetime are equal. InAs/GaSb T2SL photodetectors offer similar performance to HgCdTe at an equivalent cut-off wavelength, but with a sizeable penalty in operating temperature, due to the inherent difference in SRH lifetimes. It is predicted that since the future infrared (IR) systems will be based on the room temperature operation of depletion-current limited arrays with pixel densities that are fully consistent with background- and diffraction-limited performance due to the system optics, the material system with long SRH lifetime will be required. Since T2SLs are very much resisted in attempts to improve its SRH lifetime, currently the only material that meets this requirement is HgCdTe. Due to less ionic chemical bonding, III-V semiconductors are more robust than their II-VI counterparts. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability—the so-called “ibility” advantages.

The paper compares the achievements of quantum well infrared photodetector (QWIP) technology with those of competitive technologies, with the emphasis on the material properties, device structure, and their impact on focal plane array (FPA) performance. Special attention is paid to two competitive technologies, QWIP and HgCdTe, in the long-wavelength IR (LWIR) and very-long-wavelength IR (VLWIR) spectral ranges. Because so far, the dialogue between the QWIP and HgCdTe communities is limited, the paper attempts to settle the main issues of both technologies. Such an approach, however, requires the presentation of fundamental limits to the different types of detectors, which is made at the beginning. To write the paper more clearly for readers, many details are included in the Appendix. In comparative studies both photon and thermal detectors are considered. Emphasis is placed on photon detectors. In this group one may distinguish HgCdTe photodiodes, InSb photodiodes, and doped silicon detectors. The potential performance of different materials as infrared detectors is examined utilizing the α/G ratio, where α is the absorption coefficient and G is the thermal generation rate. It is demonstrated that LWIR QWIP’s cannot compete with HgCdTe photodiodes as single devices, especially at higher operating temperatures (>70 K). This is due to the fundamental limitations associated with intersubband transitions. The advantage of HgCdTe is, however, less distinct at temperatures lower than 50 K due to problems inherent in the HgCdTe material (p-type doping, Shockley–Read recombination, trap-assisted tunneling, surface and interface instabilities). Even though QWIP is a photoconductor, several of its properties, such as high impedance, fast response time, long integration time, and low power consumption, comply well with the requirements imposed on the fabrication of large FPA’s. Due to a high material quality at low temperatures, QWIP has potential advantages over HgCdTe in the area of VLWIR FPA applications in terms of array size, uniformity, yield, and cost of the systems. The performance figures of merit of state-of-the-art QWIP and HgCdTe FPA’s are similar because the main limitations come from the readout circuits. Performance is, however, achieved with very different integration times. The choice of the best technology is therefore driven by the specific needs of a system. In the case of readout-limited detectors a low photoconductive gain increases the signal-to-noise ratio and a QWIP FPA can have a better noise equivalent difference temperature than an HgCdTe FPA with a charge well of similar size. Both HgCdTe photodiodes and QWIP’s offer multicolor capability in the MWIR and LWIR range. Powerful possibilities offered by QWIP technology are associated with VLWIR FPA applications and with multicolor detection. The intrinsic advantage of QWIP’s in this niche is due to the relative ease of growing multicolor structures with a very low defect density.

Liquid crystals, compounds and mixtures with positive dielectric anisotropies are reviewed. The mesogenic properties and physical chemical properties (viscosity, birefringence, refractive indices, dielectric anisotropy and elastic constants) of compounds being cyano, fluoro, isothiocyanato derivatives of biphenyl, terphenyl, quaterphenyl, tolane, phenyl tolane, phenyl ethynyl tolane, and biphenyl tolane are compared. The question of how to obtain liquid crystal with a broad range of nematic phases is discussed in detail. Influence of lateral substituent of different kinds of mesogenic and physicochemical properties is presented (demonstrated). Examples of mixtures with birefringence ∆n in the range of 0.2–0.5 are given.

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation P. Martyniuk, J. Antoszewski, M. Martyniuk, L. Faraone, A. Rogalski; New concepts in infrared photodetector designs. Appl. Phys. Rev. 1 December 2014; 1 (4): 041102. https://doi.org/10.1063/1.4896193 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Reviews Search Advanced Search |Citation Search

In the last two decades, several new concepts for improving the performance of infrared detectors have been proposed. These new concepts particularly address the drive towards the so-called high operating temperature focal plane arrays (FPAs), aiming to increase detector operating temperatures, and as a consequence reduce the cost of infrared systems. In imaging systems with the above megapixel formats, pixel dimension plays a crucial role in determining critical system attributes such as system size, weight and power consumption (SWaP). The advent of smaller pixels has also resulted in the superior spatial and temperature resolution of these systems. Optimum pixel dimensions are limited by diffraction effects from the aperture, and are in turn wavelength-dependent. In this paper, the key challenges in realizing optimum pixel dimensions in FPA design including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity are outlined to achieve a sufficiently adequate modulation transfer function for the ultra-small pitches involved. Both photon and thermal detectors have been considered. Concerning infrared photon detectors, the trade-offs between two types of competing technology-HgCdTe material systems and III-V materials (mainly barrier detectors)-have been investigated.

This paper presents a set of complementary corpuscular diagnostics applied in experiments for investigation of laser-produced plasma as a source of ions. The measuring possibilities and methods for processing experimental data of a cylindrical electrostatic ion energy analyzer, a Thomson parabola ion analyzer, various types of electrostatic probes, a detector of neutral atom fluxes, as well as methods for visualization of ion emission areas are discussed. Special attention was focused on the ion-induced secondary electron emission problem and its influence on the accuracy of the measurements.

The paper presents an overview of current and prospective applications of Ni3Al based intermetallic alloys—modern engineering materials with special properties that are potentially useful for both structural and functional purposes. The bulk components manufactured from these materials are intended mainly for forging dies, furnace assembly, turbocharger components, valves, and piston head of internal combustion engines. The Ni3Al based alloys produced by a directional solidification are also considered as a material for the fabrication of jet engine turbine blades. Moreover, development of composite materials with Ni3Al based alloys as a matrix hardened by, e.g., TiC, ZrO2, WC, SiC and graphene, is also reported. Due to special physical and chemical properties; it is expected that these materials in the form of thin foils and strips should make a significant contribution to the production of high tech devices, e.g., Micro Electro-Mechanical Systems (MEMS) or Microtechnology-based Energy and Chemical Systems (MECS); as well as heat exchangers; microreactors; micro-actuators; components of combustion chambers and gasket of rocket and jet engines as well components of high specific strength systems. Additionally, their catalytic properties may find an application in catalytic converters, air purification systems from chemical and biological toxic agents or in a hydrogen “production” by a decomposition of hydrocarbons.

CK2 (casein kinase 2) is a very pleiotropic serine/threonine protein kinase whose abnormally high constitutive activity has often been correlated to pathological conditions with special reference to neoplasia. The two most widely used cell permeable CK2 inhibitors, TBB (4,5,6,7-tetrabromo-1H-benzotriazole) and DMAT (2-dimethylamino-4,5,6,7-tetrabromo-1H-benzimidazole), are marketed as quite specific CK2 blockers. In the present study we show, by using a panel of approx. 80 protein kinases, that DMAT and its parent compound TBI (or TBBz; 4,5,6,7-tetrabromo-1H-benzimidazole) are potent inhibitors of several other kinases, with special reference to PIM (provirus integration site for Moloney murine leukaemia virus)1, PIM2, PIM3, PKD1 (protein kinase D1), HIPK2 (homeodomain-interacting protein kinase 2) and DYRK1a (dual-specificity tyrosine-phosphorylated and -regulated kinase 1a). In contrast, TBB is significantly more selective toward CK2, although it also inhibits PIM1 and PIM3. In an attempt to improve selectivity towards CK2 a library of 68 TBB/TBI-related compounds have been tested for their ability to discriminate between CK2, PIM1, HIPK2 and DYRK1a, ending up with seven compounds whose efficacy toward CK2 is markedly higher than that toward the second most inhibited kinase. Two of these, K64 (3,4,5,6,7-pentabromo-1H-indazole) and K66 (1-carboxymethyl-2-dimethylamino-4,5,6,7-tetrabromo-benzimidazole), display an overall selectivity much higher than TBB and DMAT when tested on a panel of 80 kinases and display similar efficacy as inducers of apoptosis.

The 2.94 μm Er:YAG laser Q-switched mechanically by a rotating mirror was developed. The laser generated pulses of 30 mJ energy and duration below 290 ns, which corresponds to over 100 kW peak power. It operated at the repetition rate of up to 25 Hz. To our knowledge it is the most powerful erbium laser operating at so high repetition rate. The developed laser can be successfully applied in medicine – e.g. in microsurgery of soft biological tissues.

Abstract Usually, porous materials are synthesized by using conventional electric heating, which can be energy‐ and time‐consuming. Microwave heating is commonly used in many households to quickly heat food. Microwave ovens can also be used as powerful devices in the synthesis of various porous materials. The microwave‐assisted synthesis offers a simple, fast, efficient, and economic way to obtain many of the advanced nanomaterials. This review summarizes the recent achievements in the microwave‐assisted synthesis of diverse groups of nanoporous materials including silicas, carbons, metal–organic frameworks, and metal oxides. Microwave‐assisted methods afford highly porous materials with high specific surface areas (SSAs), e.g., activated carbons with SSA ≈3100 m 2 g −1 , metal–organic frameworks with SSA ≈4200 m 2 g −1 , covalent organic frameworks with SSA ≈2900 m 2 g −1 , and metal oxides with relatively small SSA ≈300 m 2 g −1 . These methods are also successfully implemented for the preparation of ordered mesoporous silicas and carbons as well as spherically shaped nanomaterials. Most of the nanoporous materials obtained under microwave irradiation show potential applications in gas adsorption, water treatment, catalysis, energy storage, and drug delivery, among others.

The major criteria that control pile foundation design is pile bearing capacity (Pu). The load bearing capacity of piles is affected by the various characteristics of soils and the involvement of multiple parameters related to both soil and foundation. In this study, a new model for predicting bearing capacity is developed using an extreme gradient boosting (XGBoost) algorithm. A total of 200 driven piles static load test-based case histories were used to construct and verify the model. The developed XGBoost model results were compared to a number of commonly used algorithms—Adaptive Boosting (AdaBoost), Random Forest (RF), Decision Tree (DT) and Support Vector Machine (SVM) using various performance measure metrics such as coefficient of determination, mean absolute error, root mean square error, mean absolute relative error, Nash–Sutcliffe model efficiency coefficient and relative strength ratio. Furthermore, sensitivity analysis was performed to determine the effect of input parameters on Pu. The results show that all of the developed models were capable of making accurate predictions however the XGBoost algorithm surpasses others, followed by AdaBoost, RF, DT, and SVM. The sensitivity analysis result shows that the SPT blow count along the pile shaft has the greatest effect on the Pu.