A novel cell technology using N-doped GeSbTe films for phase change RAM

Horii, Hideki; Yi, J.H.; Park, J.H.; Ha, Y.H.; Baek, In-Hwan; Park, S.O.; Hwang, Y.N.; Lee, S.H.; Kim, Y.T.; Lee, K.H.; Chung, U‐In; Tae Moon, Joo

doi:10.1109/vlsit.2003.1221143

Public

A novel cell technology using N-doped GeSbTe films for phase change RAM

Published • Mar 2, 2004

Authors:

Hideki Horii

J.H. Yi

J.H. Park

Abstract

The Ge/sub 2/Sb/sub 2/Te/sub 5/ (GST) thin film is well known to play a critical role in PRAM (Phase Change Random Access Memory). Through device simulation, we found that high-resistive GST is indispensable to minimize the writing current of PRAM. For the first time, we tried to increase the GST re...

Subject

Dopant

Materials science

Doping

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