Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Wu, Tian‐Li; Marcon, Denis; De Jaeger, Brice; Van Hove, M.; Bakeroot, Benoit; Stoffels, Steve; Groeseneken, G.; Decoutere, Stefaan; Roelofs, Robin

doi:10.1109/irps.2015.7112769

Public

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Published • Apr 1, 2015

Authors:

Tian‐Li Wu

Denis Marcon

Brice De Jaeger

Abstract

This paper reports a comprehensive time dependent dielectric breakdown (TDDB) evaluation of recessed-gate devices with five different AlGaN barrier thicknesses with characteristics ranging from a D-mode MIS-HEMT to an E-mode MIS-FET. First, the fitted parameter β (the slope of the Weibull distributi...

Subject

Time-dependent gate oxide breakdown

Gate dielectric

Weibull distribution

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