Drastic changes in average molecularities (m=Cu/In) from m≫1 to m=0.92–0.93 and in hole concentrations from p≫1019 cm−3 to as low as p=7.5×1016 cm−3 have been observed in molecular beam epitaxy grown CuInSe2 after selective etching of the Cu–Se phase by a KCN aqueous solution; high hole concentratio...
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