Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I . Orientation Dependence and Behavior of Passivation Layers

The anisotropic etching behavior of single‐crystal silicon and the behavior of and in an ethylenediaminebased solution as well as in aqueous , , and were studied. The crystal planes bounding the etch front and their etch rates were determined as a function of temperature, crystal orientation, and et... View More