Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

Public

Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

Published in Applied Physics Letters • May 30, 2011

Authors:

G. Dingemans

,

M. M. Mandoc

,

Stefan Bordihn

Abstract

Very low surface recombination velocities 800 °C.

Subject

Annealing (glass)

Chemical vapor deposition

Research Assistant

AI chat, annotations, notes & similar papers

Finding related papers...

Discussions

(0)

No comments yet

Be the first to share your thoughts!

Publication Date: May 30, 2011 • 12:00 AM UTC

NobleID:w1/20260525/CBF93AB7

DOI:10.1063/1.3595940

No figures available

Scan for Errors

Scan for EDDII

Summarise

Generate Podcast

Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks | NobleBlocks