Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

Dingemans, G.; M. Mandoc, M.; Bordihn, Stefan; C. M. van de Sanden, M.; M. M. Kessels, W.

doi:10.1063/1.3595940

Public

Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

Published in Applied Physics Letters • May 30, 2011

Authors:

G. Dingemans

M. M. Mandoc

Stefan Bordihn

Abstract

Very low surface recombination velocities <6 and <11 cm/s were obtained for SiOx/a-SiNx:H stacks synthesized by plasma-enhanced chemical vapor deposition on low resistivity n- and p-type c-Si, respectively. The stacks induced a constant effective lifetime under low illumination, comparable to Al2O3 ...

Subject

Passivation

Annealing (glass)

Chemical vapor deposition

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