Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Wu, Tian‐Li; Marcon, Denis; Bakeroot, Benoit; De Jaeger, Brice; C. Lin, H.; Franco, J.; Stoffels, Steve; Van Hove, M.; Roelofs, Robin; Groeseneken, G.; Decoutere, Stefaan

doi:10.1063/1.4930076

Public

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Published in Applied Physics Letters • Aug 31, 2015

Authors:

Tian‐Li Wu

Denis Marcon

Benoit Bakeroot

Abstract

In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-gm), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si3N4, Rapid Thermal Chemical Vapor Deposition Si3N4, and ...

Subject

Materials science

Threshold voltage

Transconductance

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