Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]

Dingemans, G.; M. Terlinden, N.; Pierreux, Dieter; B. Profijt, Harald; C. M. van de Sanden, M.; M. M. Kessels, W.

doi:10.1149/1.3501970

Public

Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]

Published in Electrochemical and Solid-State Letters • Oct 21, 2010

Authors:

G. Dingemans

N. M. Terlinden

Dieter Pierreux

Abstract

Differences in Si surface passivation by aluminum oxide films synthesized using and -based thermal atomic layer deposition (ALD) and plasma ALD have been revealed. A low interface defect density of was obtained after annealing, independent of the oxidant. This low was found to be vital for the passi...

Subject

Passivation

Atomic layer deposition

Annealing (glass)

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