High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

Kim, Hwa-Mok; Cho, Yong‐Hoon; Lee, Hosang; Il Kim, Suk; Ryong Ryu, Sung; Young Kim, Deuk; Won Kang, Tae; Soo Chung, Kwan

doi:10.1021/nl049615a

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High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

Published in Nano Letters • May 19, 2004

Authors:

Hwa-Mok Kim

Yong‐Hoon Cho

Hosang Lee

Abstract

We demonstrate the realization of the high-brightness and high-efficiency light emitting diodes (LEDs) using dislocation-free indium gallium nitride (InGaN)/gallium nitride (GaN) multiquantum-well (MQW) nanorod (NR) arrays by metal organic-hydride vapor phase epitaxy (MO−HVPE). MQW NR arrays (NRAs) ...

Subject

Light-emitting diode

Materials science

Optoelectronics

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