A New Field-Effect Transistor with Selectively Doped GaAs/n-Al<sub>x</sub>Ga<sub>1-x</sub>As Heterojunctions

Mimura, Takashi; Hiyamizu, S.; Fujii, Toshio; Nanbu, Kazuo

doi:10.1143/jjap.19.l225

Public

A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

Published in Japanese Journal of Applied Physics • May 1, 1980

Authors:

Takashi Mimura

S. Hiyamizu

Toshio Fujii

Abstract

Studies of field-effect control of the high mobility electrons in MBE-grown selectively doped GaAs/n-Al x Ga 1- x As heterojunctions are described. Successful fabrication of a new field-effect transistor, called a high electron mobility transistor (HEMT), with extremely high-speed microwave capabili...

Subject

Heterojunction

High-electron-mobility transistor

Doping

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