A comprehensive review of ZnO materials and devices
Published in Journal of Applied Physics • Aug 15, 2005
Authors:,,
Ü. Özgür
Ya. I. Alivov
C. Liu
Abstract
The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the r...
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