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A comprehensive review of ZnO materials and devices

Published in Journal of Applied Physics • Aug 15, 2005
Authors:
Ü. Özgür
,
Ya. I. Alivov
,
C. Liu

Abstract

The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the r...

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