Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales

Sire, C.; Blonkowski, S.; J. Gordon, Michael; Baron, T.

doi:10.1063/1.2822420

Public

Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales

Published in Applied Physics Letters • Dec 10, 2007

Authors:

C. Sire

S. Blonkowski

Michael J. Gordon

Abstract

The statistics of electrical breakdown field (Ebd) of HfO2 and SiO2 thin films has been evaluated over multiple length scales using macroscopic testing of standardized metal-oxide-semiconductor (TiN∕SiO2∕Si) and metal-insulator-metal (TiN∕HfO2∕TiN) capacitors (10−2mm2–10μm2 area) on a full 200mm waf...

Subject

Materials science

Tin

Nanometre

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