8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

Uemoto, Yasuhiro; Shibata, Daisuke; Yanagihara, Manabu; Ishida, Hidetoshi; Matsuo, Hisayoshi; Nagai, Shuichi; Batta, Nagaraj; Li, Ming; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke

doi:10.1109/iedm.2007.4419085

Public

8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

Published • Dec 1, 2007

Authors:

Yasuhiro Uemoto

Daisuke Shibata

Manabu Yanagihara

Abstract

We report ultra high voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire with thick poly-AlN passivation. Extremely high blocking voltage of 8300 V is achieved while maintaining relative low specific on-state resistance (Ron*A) of 186 mOmegaldrcm2. Via-holes through sapphire at the drai...

Subject

Passivation

Materials science

Sapphire

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