The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN

We present the results of our experimental and theoretical studies concerning the temperature dependence of electron mobility in a two-dimensional electron gas (2DEG) confined at the GaN/AlGaN interface. Experimental mobility of 2912 cm2 (V s)−1 at 4.2 K, remains almost constant up to lattice temper... View More