15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

Dupré, C.; Hubert, A.; Bécu, Stéphane; Jublot, Michaël; Maffini-Alvaro, V.; Vizioz, C.; Aussenac, F.; Arvet, C.; Barnola, S.; Hartmann, Jean‐Michel; Garnier, G.; Allain, F.; P. Colonna, J.; Rivoire, M.; Baud, L.; Pauliac, S.; Loup, V.; Chevolleau, T.; Rivallin, P.; Guillaumot, B.; Ghibaudo, G.; Faynot, O.; Ernst, T.; Deleonibus, S.

doi:10.1109/iedm.2008.4796805

Public

15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

Published • Dec 1, 2008

Authors:

C. Dupré

A. Hubert

Stéphane Bécu

Abstract

For the first time, we report a 3D stacked sub-15 nm diameter NanoWire FinFET-like CMOS technology (3D-NWFET) with a new optional independent gate nanowire structure named PhiFET. Extremely high driving currents for 3D-NWFET (6.5 mA/mum for NMOS and 3.3 mA/mum for PMOS) are demonstrated thanks to th...

Subject

PMOS logic

NMOS logic

Nanowire

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