Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

Xie, Qi; Jiang, Yu-Long; Detavernier, Christophe; Deduytsche, Davy; Van Meirhaeghe, R.L.; Ru, Guo-Ping; Li, Bing-Zong; Qu, Xin-Ping

doi:10.1063/1.2798384

Public

Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

Published in Journal of Applied Physics • Oct 15, 2007

Authors:

Qi Xie

Yu-Long Jiang

Christophe Detavernier

Abstract

Atomic layer deposition (ALD) of TiO2 thin films using Ti isopropoxide and tetrakis-dimethyl-amido titanium (TDMAT) as two kinds of Ti precursors and water as another reactant was investigated. TiO2 films with high purity can be grown in a self-limited ALD growth mode by using either Ti isopropoxide...

Subject

Atomic layer deposition

Titanium

Thin film

Finding related papers...

Discussions

(0)

No comments yet

Be the first to share your thoughts!