Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers

In order to improve the performance of deep ultraviolet light-emitting diodes (UV LEDs), the effects of different electron blocking layers (EBLs) on the performance of Al x Ga 1-x N-based deep UV LEDs at 310 nm have been studied through a numerical simulation. The simulation results show that the ad... View More