ZnTe/GaAs(001): Growth mode and strain evolution during the early stages of molecular-beam-epitaxy heteroepitaxial growth

H. Etgens, V.; Sauvage-Simkin, M.; Pinchaux, R.; Massies, J.; Jedrecy, N.; Waldhauer, A.; Tatarenko, S.; Jouneau, P.-H.

doi:10.1103/physrevb.47.10607

Public

ZnTe/GaAs(001): Growth mode and strain evolution during the early stages of molecular-beam-epitaxy heteroepitaxial growth

Published in Physical review. B, Condensed matter • Apr 15, 1993

Authors:

V. H. Etgens

M. Sauvage-Simkin

R. Pinchaux

Abstract

The initial stages of molecular-beam-epitaxy heteroepitaxial growth of ZnTe on GaAs(001) substrates are studied by in situ grazing incidence x-ray diffraction performed under ultrahigh vacuum. Pseudomorphic fully strained layers are observed for deposits up to 4 molecular layers (ML), whereas plasti...

Subject

Molecular beam epitaxy

Materials science

Epitaxy

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