Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition

Narayan, J.; Tiwari, P.; Chen, X.; Singh, Jarnail; A. Chowdhury, Reaz; Zheleva, Tsvetanka

doi:10.1063/1.107568

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Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition

Published in Applied Physics Letters • Sep 14, 1992

Authors:

J. Narayan

P. Tiwari

X. Chen

Abstract

We report epitaxial growth of TiN films having low resistivity on (100) silicon substrates using pulsed laser deposition method. The TiN films were characterized using x-ray diffraction, Rutherford backscattering, four-point-probe ac resistivity, high resolution transmission electron microscopy and ...

Subject

Epitaxy

Tin

Materials science

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