Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

Müller, Johannes; S. Böscke, T.; Müller, Stefan; Yurchuk, Ekaterina; Polakowski, P.; Paul, J.; Martin, Dominik; Schenk, Tony; Khullar, K.; Kersch, Alfred; Weinreich, Wenke; Riedel, S.; Seidel, Konrad; Kumar, Amit; M. Arruda, Thomas; V. Kalinin, Sergei; Schlösser, T.; Boschke, Roman; van Bentum, Ralf; Schröder, U.; Mikolajick, Thomas

doi:10.1109/iedm.2013.6724605

Public

Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

Published • Dec 1, 2013

Authors:

Johannes Müller

T. S. Böscke

Stefan Müller

Abstract

With the ability to engineer ferroelectricity in HfO2thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.

Subject

Ferroelectricity

Capacitor

Scalability

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