Crossover from semiconductor to magnetic metal in semi-Heusler phases as a function of valence electron concentration

Toboła, J.; Pierre, J.; Kaprzyk, S.; Skolozdra, R.V.; Abaka Kouacou, Michel

doi:10.1088/0953-8984/10/5/011

Public

Crossover from semiconductor to magnetic metal in semi-Heusler phases as a function of valence electron concentration

Published in Journal of Physics Condensed Matter • Feb 9, 1998

Authors:

J. Toboła

J. Pierre

S. Kaprzyk

Abstract

Experimental and theoretical investigations of intermetallic semi-Heusler compounds (CoTiSn, FeTiSb, CoTiSb, NiTiSn, CoNbSn, CoVSb, NiTiSb) and their solid solutions are presented. The physical properties of these systems are found to be mostly determined by the number of valence electrons. Resistiv...

Subject

Condensed matter physics

Valence (chemistry)

Valence electron

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