Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork

Xie, Jinqiao; Özgür, Ü.; Fu, Y.; Ni, X.; Morkoç̌, H.; K. Inoki, C.; S. Kuan, T.; V. Foreman, John; O. Everitt, Henry

doi:10.1063/1.2433754

Public

Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork

Published in Applied Physics Letters • Jan 22, 2007

Authors:

Jinqiao Xie

Ü. Özgür

Y. Fu

Abstract

Significant improvement of structural and optical qualities of GaN thin films on sapphire substrates was achieved by metal organic chemical vapor deposition with in situ SiNx nanonetwork. Transmission electron microscope (TEM) studies revealed that screw- and edge-type dislocations were reduced to 4...

Subject

Materials science

Sapphire

Photoluminescence

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