Silicon surface passivation by ultrathin Al<sub>2</sub>O<sub>3</sub> films synthesized by thermal and plasma atomic layer deposition

Dingemans, G.; Seguin, R.; Engelhart, P.; C. M. van de Sanden, M.; M. M. Kessels, W.

doi:10.1002/pssr.200903334

Public

Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition

Published in physica status solidi (RRL) - Rapid Research Letters • Nov 2, 2009

Authors:

G. Dingemans

R. Seguin

P. Engelhart

Abstract

Abstract In this Letter, we report that both thermal atomic layer deposition (ALD) with H 2 O, and plasma ALD with an O 2 plasma, can be used to deposit Al 2 O 3 for a high level of surface passivation of crystalline silicon (c‐Si). For 3.5 Ω cm n‐type c‐Si, plasma ALD Al 2 O 3 resulted in ultralow ...

Subject

Passivation

Atomic layer deposition

Thermal stability

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