Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition

Dingemans, G.; Seguin, R.; Engelhart, P.; C. M. van de Sanden, M.; M. M. Kessels, W.

doi:10.1002/pssr.200903334

Public

Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition

Published in physica status solidi (RRL) - Rapid Research Letters • Nov 2, 2009

Authors:

G. Dingemans

R. Seguin

P. Engelhart

Abstract

Abstract In this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD with an O2 plasma, can be used to deposit Al2O3 for a high level of surface passivation of crystalline silicon (c‐Si). For 3.5 Ω cm n‐type c‐Si, plasma ALD Al2O3 resulted in ultralow surface r...

Subject

Passivation

Atomic layer deposition

Thermal stability

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