High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition

Jiang, Ji-an; Tsao, S.; D. O’Sullivan, Thomas; Zhang, W.; Lim, H.; Sills, T.; Mi, K.; Razeghi, M.; J. Brown, Gail; Z. Tidrow, Meimei

doi:10.1063/1.1688982

Public

High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition

Published in Applied Physics Letters • Mar 12, 2004

Authors:

Ji-an Jiang

S. Tsao

Thomas D. O’Sullivan

Abstract

We report a high detectivity middle-wavelength infrared quantum dot infrared photodetector (QDIP). The InGaAs quantum dots were grown by self-assembly on an InGaP matrix via low pressure metalorganic chemical vapor deposition. Photoresponse was observed at temperatures above 200 K with a peak wavele...

Subject

Photodetector

Chemical vapor deposition

Quantum dot

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