Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear region

Haddara, H.; Cristoloveanu, S.

doi:10.1109/t-ed.1987.22933

Public

Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear region

Published in IEEE Transactions on Electron Devices • Feb 1, 1987

Authors:

H. Haddara

S. Cristoloveanu

Abstract

The effect of localized damage (interface states and/or trapped charges) on the ohmic region characteristics of electrically stressed MOSFET's is analyzed using the two-dimensional (2-D) solution of Poisson's equation. The device aging induced by hot-electron injection is summarized in the formation...

Subject

Transconductance

Overshoot (microwave communication)

MOSFET

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