Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

Menou, N.; Popovici, M.; Clima, Sergiu; Opsomer, Karl; Polspoel, W.; Kaczer, B.; Rampelberg, Geert; Tomida, Kazuyuki; Pawlak, Małgorzata; Detavernier, Christophe; Pierreux, Dieter; Swerts, Johan; Willem Maes, Jan; Manger, D.; Badylevich, M.; Afanasiev, Valeri; Conard, Thierry; Favia, Paola; Bender, H.; Brijs, Bert; Vandervorst, Wilfried; Van Elshocht, Sven; Pourtois, Geoffrey; J. Wouters, Dirk; Biesemans, S.; A. Kittl, J.

doi:10.1063/1.3246835

Public

Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

Published in Journal of Applied Physics • Nov 1, 2009

Authors:

N. Menou

M. Popovici

Sergiu Clima

Abstract

In this work, the physical and electrical properties of SrxTi1−xOy (STO)-based metal-insulator-metal capacitors (MIMcaps) with various compositions are studied in detail. While most recent studies on STO were done on noblelike metal electrodes (Ru, Pt), this work focuses on a low temperature (250 °C...

Subject

Materials science

Atomic layer deposition

Tin

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