Characterization of homoepitaxial <i>p</i>-type ZnO grown by molecular beam epitaxy

C. Look, D.; C. Reynolds, D.; W. Litton, C.; Jones, Robert; B. Eason, D.; Cantwell, G.

doi:10.1063/1.1504875

Public

Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

Published in Applied Physics Letters • Aug 30, 2002

Authors:

D. C. Look

D. C. Reynolds

C. W. Litton

Abstract

An N-doped, p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating ZnO substrate. Hall-effect and conductivity measurements on the layer give: resistivity=4×101 Ω cm; hole mobility=2 cm2/V s; and hole concentration=9×1016 cm−3. Photoluminescence measuremen...

Subject

Molecular beam epitaxy

Photoluminescence

Exciton

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