Landau Quantization and the Thickness Limit of Topological Insulator Thin Films of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Sb</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>

Jiang, Yeping; Wang, Yilin; Chen, Mu; Li, Zhi; Song, Can‐Li; He, Ke; Wang, Lili; Chen, Xi; Ma, Xu-Cun; Xue, Qi‐Kun

doi:10.1103/physrevlett.108.016401

Public

Landau Quantization and the Thickness Limit of Topological Insulator Thin Films ofSb2Te3

Published in Physical Review Letters • Jan 3, 2012

Authors:

Yeping Jiang

Yilin Wang

Mu Chen

Abstract

We report the experimental observation of Landau quantization of molecular beam epitaxy grown Sb{2}Te{3} thin films by a low-temperature scanning tunneling microscope. Different from all the reported systems, the Landau quantization in a Sb{2}Te{3} topological insulator is not sensitive to the intri...

Subject

Quantization (signal processing)

Topological insulator

Physics

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