Cause of the High Pesistance Region at Vapour Epitaxial GaAs Layer-Substrate Interface

A trial is made to clarify the cause of the high resistance region at the interface between the GaAs substrate and the epitaxial layer grown by the Ga/AsCl 3 /H 2 process. Layers were grown under conditions (a) the temperature of the substrate is changed during the growth run and (b) excess arsenic ... View More