Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

Akasaki Isamu Akasaki, Isamu; Amano, Hiroshi

doi:10.1143/jjap.36.5393

Public

Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

Published in Japanese Journal of Applied Physics • Sep 1, 1997

Authors:

Isamu Akasaki Isamu Akasaki

Hiroshi Amano

Abstract

Recent development of technology and understanding of the growth mechanism in heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow high-quality GaN, AlGaN, GaInN and their quantum well structures. Conductivity control of both n-type and p-type nitrides has also ...

Subject

Optoelectronics

Nitride

Materials science

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