Observing Electroluminescence from Yellow Luminescence-Like Defects in GaN High Electron Mobility Transistors

A yellow band electroluminescence (EL) characteristic, which might be attributed to the same origin as the yellow luminescence (YL) defects, was observed in GaN high electron mobility transistors (HEMTs) at room temperature. The YL-like defect origin has been tentatively confirmed by comparing EL an... View More