Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient

Caubet, P.; Blomberg, Tom; Benaboud, R.; Wyon, Christophe; Blanquet, E.; P. Gonchond, J.; Juhel, M.; Bouvet, Philippe; Gros‐Jean, M.; Michailos, J.; Richard, C.; Iteprat, Blaise

doi:10.1149/1.2940306

Public

Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient

Published in Journal of The Electrochemical Society • Jan 1, 2008

Authors:

P. Caubet

Tom Blomberg

R. Benaboud

Abstract

Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient, Caubet, Pierre, Blomberg, Tom, Benaboud, Rym, Wyon, Christophe, Blanquet, Elisabeth, Gonchond, Jean-Pierre, Juhel, Marc, Bouvet, Philippe, Gros-Jean, Mickaël, Michailos, Jean, Richard, Claire, Iteprat, Blaise

Subject

Tin

Electrical resistivity and conductivity

Titanium nitride

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