Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials

A. Kraut, E.; W. Grant, R.; R. Waldrop, J.; P. Kowalczyk, S.

doi:10.1103/physrevlett.44.1620

Public

Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials

Published in Physical Review Letters • Jun 16, 1980

Authors:

E. A. Kraut

R. W. Grant

J. R. Waldrop

Abstract

A highly precise method for locating the valence-band edge in x-ray photoemission spectra is reported. The application to measuring semiconductor interface potentials is discussed. X-ray photoemission-spectroscopy experiments on Ge and GaAs(110) crystals have given Ge $3d$, Ga $3d$, and As $3d$ core...

Subject

Heterojunction

Valence band

Semiconductor

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