Two modes of HVPE growth of GaN and related macrodefects

V. VORONENKOV, V.; I. Bochkareva, N.; I. Gorbunov, R.; Latyshev, Philippe; S. Lelikov, Yu.; T. Rebane, Yu.; I. Tsyuk, A.; S. Zubrilov, A.; Popp, U.; Strafela, M.; P. Strunk, H.; G. Shreter, Yu.

doi:10.1002/pssc.201200701

Public

Two modes of HVPE growth of GaN and related macrodefects

Shared by NobleBlocks on Feb 7, 2013 • 12:00 AM UTC

Authors:

V. V. VORONENKOV

N. I. Bochkareva

R. I. Gorbunov

Abstract

Abstract GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mode. Films grown in HT mode had smooth surface, however the growth stress was high and caused cracking. Films gr...

Subject

Materials science

Epitaxy

Composite material

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