Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale

Gruverman, A.; Wu, D.; Lu, H.; Wang, Y.; W. Jang, H.; M. Folkman, C.; Ye. Zhuravlev, M.; Felker, D.; Rzchowski, M.; Eom, C.-B.; Y. Tsymbal, E.

doi:10.1021/nl901754t

Public

Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale

Published in Nano Letters • Aug 21, 2009

Authors:

A. Gruverman

D. Wu

H. Lu

Abstract

Using a set of scanning probe microscopy techniques, we demonstrate the reproducible tunneling electroresistance effect on nanometer-thick epitaxial BaTiO(3) single-crystalline thin films on SrRuO(3) bottom electrodes. Correlation between ferroelectric and electronic transport properties is establis...

Subject

Ferroelectricity

Materials science

Nanoscopic scale

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