Comprehensive analysis of Si-doped AlxGa1−xAs ( x=0 to 1 ): Theory and experiments

Temperature-dependent Hall-effect measurements were carried out both in dark and in ambient light on Si-doped ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ layers grown by molecular-beam epitaxy over the entire composition range. Above 150 K, the measured Hall carrier densities (dif... View More