Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes

I. Alivov, Ya.; E. Van Nostrand, J.; C. Look, D.; В. Чукичев, М.; M. Ataev, B.

doi:10.1063/1.1615308

Public

Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes

Published in Applied Physics Letters • Oct 3, 2003

Authors:

Ya. I. Alivov

J. E. Van Nostrand

D. C. Look

Abstract

In this work, we report on the growth, fabrication, and device characterization of wide-band-gap heterojunction light-emitting diodes based on the n-ZnO/p-GaN material system. The layer structure is achieved by first growing a Mg-doped GaN film of thickness 1 μm on Al2O3(0001) by molecular-beam epit...

Subject

Electroluminescence

Materials science

Optoelectronics

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