Photo-induced creation of metastable defects in a-Si: H at low temperatures and their effect on the photoconductivity

Using undoped hydrogenated amorphous silicon (a-Si: H) containing ND = 6.7 × 1015cm-3 native dangling bond (DB) defects we found that metastable DB defects can be created with comparable efficiency at 4.2 K and 300 K by exposure to bandgap light. This shows that the creation mechanism is not thermal... View More