Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

Dingemans, G.; Engelhart, P.; Seguin, R.; Einsele, F.; Hoex, Bram; C. M. van de Sanden, M.; M. M. Kessels, W.

doi:10.1063/1.3264572

Public

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

Published in Journal of Applied Physics • Dec 1, 2009

Authors:

G. Dingemans

P. Engelhart

R. Seguin

Abstract

The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al2O3 was compared with results for thermal SiO2. For Al2O3 and Al2O3/a-SiNx:H stacks on 2 Ω cm n-type c-Si, ultralow surface recombination velocities of Seff<3 cm/s were o...

Subject

Passivation

Thermal stability

Materials science

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