A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon

A boost converter was constructed using a high voltage enhancement mode (E-mode) AlGaN/GaN/AlGaN DHFET transistor grown on Si. The very low dynamic onresistance (R dyn ≈ 0.23 Ω) and very low gate-charges (e.g. Q gate ~15 nC at Vos = 200 V) result in minor transistor losses. Together with a proper de... View More