Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

Matsunaga, Shoun; Hayakawa, Jun; Ikeda, Shoji; Miura, K.; Hasegawa, H.; Endoh, Tetsuo; Ohno, Hideo; Hanyu, Takahiro

doi:10.1143/apex.1.091301

Public

Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

Published in Applied Physics Express • Aug 22, 2008

Authors:

Shoun Matsunaga

Jun Hayakawa

Shoji Ikeda

Abstract

Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions, Matsunaga, Shoun, Hayakawa, Jun, Ikeda, Shoji, Miura, Katsuya, Hasegawa, Haruhiro, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro

Subject

Adder

Materials science

Fabrication

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