Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

Lelièvre, J.‐F.; Fourmond, Erwann; Kaminski, A.; Palais, O.; Ballutaud, D.; Lemiti, M.

doi:10.1016/j.solmat.2009.01.023

Public

Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

Published in Solar Energy Materials and Solar Cells • Mar 13, 2009

Authors:

J.‐F. Lelièvre

Erwann Fourmond

A. Kaminski

Abstract

This work is a contribution towards the understanding of the properties of hydrogenated silicon nitride (SiN x :H) that lead to efficient surface and bulk passivation of the silicon substrate. Considering the deposition system used (low-frequency plasma-enhanced chemical vapour deposition (PECVD)), ...

Subject

Passivation

Plasma-enhanced chemical vapor deposition

Materials science

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