Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

I. Alivov, Ya.; V. Kalinina, E.; E. Cherenkov, A.; C. Look, D.; M. Ataev, B.; K. Omaev, A.; В. Чукичев, М.; M. Bagnall, Darren

doi:10.1063/1.1632537

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Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

Published in Applied Physics Letters • Dec 4, 2003

Authors:

Ya. I. Alivov

E. V. Kalinina

A. E. Cherenkov

Abstract

We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like, rectifying I–V characteristics, with threshold vo...

Subject

Materials science

Optoelectronics

Heterojunction

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