Structural properties of InxGa1 xN/GaN and AlxGa1 xN/GaN MQWs studied by XRD

We investigated by using high resolution x-ray diffraction and glancing incidence x-ray reflectivity InxGa1−xN/GaN and AlxGa1−xN/GaN multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy on (0001) 6H–SiC substrates covered by a GaN buffer layer. In particular, the macrostrain... View More