Chemically amplified resists resolving 25 nm 1:1 line: space features with EUV lithography

We have investigated a number of key resist factors using EUV lithography including activation energy of deprotection. Our standard high activation resist material, MET-2D (XP5271F), is capable of robust performance at CDs in 40 nm regime and thicknesses above 100 nm. Below 100 nm film thickness, co... View More