Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

Takeuchi, Tetsuya; Amano, Hiroshi; Akasaki, Isamu

doi:10.1143/jjap.39.413

Public

Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

Published in Japanese Journal of Applied Physics • Feb 1, 2000

Authors:

Tetsuya Takeuchi

Hiroshi Amano

Isamu Akasaki

Abstract

We calculated the crystal orientation dependence of piezoelectric fields in wurtzite strained Ga0.9In0.1N/GaN heterostructures. The highest longitudinal piezoelectric field of 0.7 MV/cm can be generated in (0001)-oriented biaxial-strained Ga0.9In0.1N layer coherently grown on GaN. On the contrary, n...

Subject

Wurtzite crystal structure

Heterojunction

Piezoelectricity

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