TiN thin films have been grown by reactive magnetron sputtering. It has been shown that an Ohmic contact to TiN thin-film can be made from indium. The TiN thin films have been shown to be n-type semiconductors with a carrier concentration of 2.88 × 1022 cm−3 and resistivity of ρ = 0.4 Ω cm at room t...
No comments yet
Be the first to share your thoughts!