Electrical Properties of Amorphous Silicon Transistors and MIS‐Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations

Rolland, Alain; Richard, J.; Kleider, Jean‐Paul; Mencaraglia, D.

doi:10.1149/1.2221149

Public

Electrical Properties of Amorphous Silicon Transistors and MIS‐Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations

Shared by NobleBlocks on Dec 1, 1993 • 12:00 AM UTC

Authors:

Alain Rolland

J. Richard

Jean‐Paul Kleider

Abstract

The electrical properties of silicon nitride/amorphous silicon structures were investigated using thin film transistors (TFTs) and metal insulator semiconductor (MIS) devices employing either a top nitride (TN) or bottom nitride (BN) as gate insulator. The density of states (DOS) deduced from the su...

Subject

Materials science

Optoelectronics

Nitride

Finding related papers...

Discussions

(0)

No comments yet

Be the first to share your thoughts!